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| RH1011 Voltage Comparator DESCRIPTION The RH1011 is a general purpose comparator with significantly better input characteristics than the LM111. Although pin compatible with the LM111, it offers four times lower bias current, six times lower offset voltage and five times higher voltage gain. The wafer lots are processed to Linear Technology's inhouse Class S flow to yield circuits usable in stringent military applications. , LTC and LT are registered trademarks of Linear Technology Corporation. ABSOLUTE MAXIMUM RATINGS Supply Voltage (Pin 8 to Pin 4)................................ 36V Output to Negative Supply (Pin 7 to Pin 4) ............. 35V Ground to Negative Supply (Pin 1 to Pin 4) ............ 30V Differential Input Voltage ....................................... 35V Voltage at STROBE Pin (Pin 6 to Pin 8) .................... 5V Input Voltage (Note 1) ....................... Equal to Supplies Output Short-Circuit Duration ............................. 10 sec Operating Temperature Range (Note 2) ........................................... - 55C to 125C Storage Temperature Range ................. - 65C to 150C Lead Temperature (Soldering, 10 sec).................. 300C BUR -I CIRCUIT 18V 15V 1.3k 8 8 50k 2 + - 4 5 7 50k 100k 2V 3 - 7 200 50k 3 1 OR 2 + 4 1 604 -18V -15V RH1011 BI PACKAGE I FOR ATIO TOP VIEW V+ 8 GND 1 - TOP VIEW 7 OUTPUT TOP VIEW GND 1 +INPUT 2 -INPUT 3 V- 4 J8 PACKAGE 8-LEAD CERDIP 8 7 6 5 V+ OUTPUT BALANCE/ STROBE BALANCE GND 1 +INPUT 2 NC 4 V- 5 W PACKAGE 10-LEAD CERPAC - +INPUT 2 -INPUT 3 6 BALANCE/ STROBE -INPUT 3 5 BALANCE 4 V- H PACKAGE 8-LEAD TO-5 METAL CAN U WW + W U W U U UU + 10 V + 9 OUTPUT 8 NC BALANCE/ 7 STROBE 6 BALANCE 1 RH1011 TABLE 1: ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER VOS IOS IB V OS T AVOL Input Offset Voltage RS 50k Input Offset Curret Input Bias Current Input Offset Voltage Drift Large Signal Voltage Gain TMIN T T MAX R = 1k to 15V, - 10V V OUT 14.5V R = 500 to 5V, 0.5V V OUT 4.5V CMRR Common Mode Rejection Ratio Input Voltage Range td VOL Response Time Output Saturation Voltage Output Leakage Current Positive Supply Current Negative Supply Current Strobe Current Input Capacitance Minimum to Ensure Output Transisor is Turned Off 7,9 500 6 VIN = 5mV, ISINK = 8mA V1 = 0V, ISINK = 50mA VIN = 5mV, V1 = - 15V, VOUT = 20V VS = 15V VS = Single 5V 8,9 8,9 6,9 CONDITIONS NOTES 3 4 4 3 4 5,9 200 50 90 - 14.5 0.5 13 3.0 250 0.4 1.5 10 4.0 2.5 1 1 1 1 1 0.5 1.5 500 2,3 2,3 2,3 4 4 1 - 14.5 0.5 13 3.0 (Preirradiation) (Note 10) MIN TA = 25C TYP MAX 1.5 2.0 4 50 65 SUB- - 55C T A 125C GROUP MIN TYP MAX 1 1 1 1 1 3.0 3.0 6 80 80 25 SUBGROUP 2,3 2,3 2,3 2,3 2,3 UNITS mV mV nA nA nA V/C V/mV V/mV dB V V ns V V nA mA mA A pF TABLE 1A: ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER VOS IOS IB AVOL CMRR Input Offset Voltage Input Offset Current Input Bias Current Large-Signal Voltage Gain R = 1k to 15V - 10V V OUT 14.5V Common Mode Rejection Ratio Input Voltage Range VOL Output Saturation Voltage Output Leakage Current VS = 15V VS = Single 5V VIN = 5mV, ISINK = 8mA VIN = 0V, ISINK = 50mA VIN = 5mV, V1 = - 15V VOUT = 20V 8,9 200 90 - 14.5 0.5 CONDITIONS (Postirradiation) (Note 10) 50Krad(Si) 100Krad(Si) 200Krad(Si) MIN MAX MIN MAX MIN MAX UNITS 1.5 4 150 150 90 13 3.0 0.4 1.5 10 100 90 1.5 20 200 50 86 13 3.0 0.4 1.5 100 2 50 300 mV nA nA V/mV dB V V V V nA 10Krad(Si) 20Krad(Si) NOTES MIN MAX MIN MAX 1.5 4 50 200 90 13 - 14.5 3.0 0.5 0.4 1.5 10 1.5 4 100 - 14.5 13 - 14.5 13 - 14.5 0.5 3.0 0.5 3.0 0.5 0.4 1.5 100 0.4 1.5 100 2 RH1011 TABLE 1A: ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER Positive Supply Current Negative Supply Current Strobe Current Input Capacitance Note 1: Inputs may be clamped to supplies with diodes so that maximum input voltage actually exceeds supply voltage by one diode drop. See Input Protection discussion in the LT(R)1011 data sheet. Note 2: TJMAX = 150C. Note 3: Output is sinking 1.5mA with VOUT = 0V. Note 4: These specifications apply for all supply voltages from a single 5V to 15V, the entire input voltage range and for both high and low output states. The high state is ISINK 100A, V OUT ( V + - 1V) and the low state is ISINK 0.8V. Therefore, this specication defines a worst-case error band that includes effects due to common mode signals, voltage gain and output load. Note 5: Drift is calculated by dividing the offset difference measured at minimum and maximum temperatures by the temperature difference. Minimum to Ensure Output Transistor is Truned Off 7,9 500 6 (Typ) CONDITIONS (Postirradiation) (Note 10) 50Krad(Si) 100Krad(Si) 200Krad(Si) MIN MAX MIN MAX MIN MAX UNITS 4.0 2.5 500 6 (Typ) 500 6 (Typ) 4.0 2.5 500 6 (Typ) 4.0 2.5 mA mA A pF 10Krad(Si) 20Krad(Si) NOTES MIN MAX MIN MAX 4.0 2.5 500 6 (Typ) 4.0 2.5 Note 6: Response time is measured with a 100mV step and 5V overdrive. The output load is a 500 resistor tied to 5V. Time measurement is taken when the output crosses 1.4V. Note 7: Do not short the STROBE pin to ground. It should be current driven at 3mA to 5mA for the shortest strobe time. Currents as low as 500A will strobe the RH1011 if speed is not important. External leakage on the STROBE pin in excess of 0.2A when the strobe is "off " can cause offset voltage shifts. Note 8: See graph, Input Offset Voltage vs Common Mode Voltage on the LT1011 data sheet. Note 9: Guaranteed by design, characterization or correlation to other tested parameters. Note 10: VS = 15V, VCM = 0V, RS = 0 , T A = 25C, V1 = - 15V, output at Pin 7, unless otherwise noted. TABLE 2: ELECTRICAL TEST REQUIRE E TS MIL-STD-883 TEST REQUIREMENTS Final Electrical Test Requirements (Method 5004) Group A Test Requirements (Method 5005) Group C and D End Point Electrical Parameters (Method 5005) * PDA Applies to subgroup 1. See PDA Test Notes. SUBGROUP 1*,2,3,4 1,2,3,4 1 PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883 Class B. The verified failures (including Delta parameters) of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burn-in in that lot shall be used to determine the percent for the lot. Linear Technology Corporation reserves the right to test to tighter limits than those given. TOTAL DOSE BIAS CIRCUIT 12V 5.1k 2 12 8 5.1k + 7 3 - 4 12 -12V Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. UW 1 RH1011 TDBC 3 RH1011 TYPICAL PERFORMANCE CHARACTERISTICS Input Offset Voltage 8 6 V S = 15V RS = 0 VCM = 0V 300 INPUT BIAS CURRENT (nA) INPUT OFFSET VOLTAGE (mV) 4 2 0 -2 -4 -6 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH1011 G01 INPUT OFFSET CURRENT (nA) 700 COMMON MODE REJECTION RATIO (dB) 600 VOLTAGE GAIN (V/mV) 500 400 300 200 100 0 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH1011 G04 4 Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 q FAX: (408) 434-0507 q TELEX: 499-3977 UW Input Bias Current 30 V S = 15V VCM = 0V 20 10 0 -10 -20 -30 0 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH1011 G02 Input Offset Current V S = 15V VCM = 0V 200 100 -40 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH1011 G03 Voltage Gain 130 V S = 15V RL = 1k VCM = 0V Common Mode Rejection Ratio 120 110 100 90 80 70 60 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH1011 G05 V S = 15V VCM = 14.5V TO 13V I.D. No. 66-10-0159 Rev. A 0896 LT/HP 0896 REV A 500 * PRINTED IN USA (c) LINEAR TECHNOLOGY CORPORATION 1989 |
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